SIA814DJ-T1-GE3【PDF 1/12 页】MOSFET N-CH 30V 4.5A SC70-6

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New Product

SiA814DJ

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

0.072 at V GS = 4.5 V

PRODUCT SUMMARY

V DS (V) R DS(on) ( Ω )

0.061 at V GS = 10 V

0.110 at V GS = 2.5 V

I D (A) a

4.5

Q g (Typ.)

3.2 nC

FEATURES

? Halogen-free

? LITTLE FOOT ? Plus Schottky Power MOSFET

? New Thermally Enhanced PowerPAK ?

SC-70 Package

- Small Footprint Area

RoHS

COMPLIANT

SCHOTTKY PRODUCT SUMMARY

- Low On-Resistance

- Thin 0.75 mm profile

V KA (V)

V f (V)

Diode Forward Voltage

0.56 at 1 A

I F (A) a

APPLICATIONS

? DC/DC Converter for Portable Devices

? Load Switch for Portable Devices

PowerPAK SC-70-6 Dual

N C

Markin g Code

0.75 mm

Part # code

GBX

XXX

Lot Tracea b ility

and Date code

2.05 mm

Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

N -Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwis e noted

Parameter

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

T C = 25 °C

Symbol

V DS

V KA

V GS

Limit

± 12

4.5 a

Unit

Continuous Drain Current (T J = 150 °C) (MOSFET)

T C = 70 °C

T A = 25 °C

T A = 70 °C

I D

4.5 a

4.3 b, c

3.4 b, c

Pulsed Drain Current (MOSFET)

I DM

Continuous Source-Drain Diode Current

(MOSFET Diode Conduction)

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

Maximum Power Dissipation (MOSFET)

T C = 25 °C

T A = 25 °C

T C = 25 °C

T C = 70 °C

T A = 25 °C

I S

I F

I FM

4.5 a

1.6 b, c

2 b

6.5

1.9 b, c

Maximum Power Dissipation (Schottky)

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) d, e

Document Number: 68672

S-81176-Rev. A, 26-May-08

T A = 70 °C

T C = 25 °C

T C = 70 °C

T A = 25 °C

T A = 70 °C

P D

T J , T stg

1.2 b, c

6.8

4.3

1.6 b, c

1.0 b, c

- 55 to 150

260

°C

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